Driver circuit having a slew rate control system with improved linear ramp generator including ground

ABSTRACT

Methods and structures for ensuring the highly linear discharge of a capacitor used for slew rate control of a power driving stage from a maximum voltage to a minimum supply voltage, such as ground. A voltage ramp generator uses a single cascoded current source to achieve the linear ramp-down.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to drive circuits for a powerdevice of a power driving stage, and, more particularly, to a drivercircuit operating from a supply voltage (e.g. a charge pump voltage)that is higher than the supply voltage of the power device.

2. Description of Related Art

A driver circuit is generally a relatively low power circuit thatdrives, or controls, a higher power device. The power device may be partof a power driving stage for a load. An example is a load that is amotor, such as a brushless motor, that provides the motive force for aspindle of a hard disk drive. Similar driver circuits are appliedelsewhere, such as in voice coil motor (VCM) systems.

One of the most widely used types of driver circuits in suchapplications uses a three-phase brushless motor in a configuration inwhich current energizes respective motor coils using a full wave bridgeconfiguration. The bridge includes two power stages for each phase, sotypically there are six power stages, each with a power device. Three ofthe power stages, and their power devices, are referred as being “lowside” stages and devices because they are connected between a motor coiland ground. The other three of the power stages, and their powerdevices, are referred to as “high side” stages and devices because theyare connected between a power supply and a motor coil.

The power devices are operated as switches in a sequence that allowspulses of current to flow from the power supply through a high sidepower device, a coil of a first of the three stages, a coil of a secondof the three stages, and then through a low side power device to ground.This process is repeated in a generally well known manner for the otherpower devices and coil pairs to achieve three phase energization from asingle, direct current, power supply. The switching, or commutation,characteristics of the power devices are very important in achievinggood performance from the motor and other favorable characteristics.

Control of the switching of the power devices is performed by a drivercircuit for each power device. In the typical use described above withsix power stages, there are three low side drivers and three high sidedrivers. The power devices may be of a variety of electronic switchdevices and the driver circuits are configured suitably for the powerdevices. Power devices of general application to hard disk drivers, andthe like, are each often an MOS (metal-oxide-semiconductor) FET (fieldeffect transistor). One type of such transistors of considerableinterest is referred to as a DMOS transistor (double diffusion MOS).

DMOS devices can be readily integrated in chips with other circuitry,including power control circuitry. So it is attractive to have an entireset of drive stages, including all the power devices and all the drivercircuits for the power devices, in one chip.

Even where all the power devices are alike, e.g. N channel DMOS devices,it is generally the case that the high side drivers differ from the lowside drivers because high side drivers for such power devices oftenrequire a voltage, referred to as a charge pump voltage or boostvoltage, at a higher voltage level than that supplied by the powersupply for the power stages. By known techniques, a charge pump voltagemay be generated from the supply voltage and used by all of the highside drivers. Such an auxiliary supply if present, however, is powerlimited; the desired voltage can be supplied but at a modest currentlevel.

The field of motion control using integrated signal and powercomponents, the respective requirements of low and high side drivers,and the characteristics sought in applications of motor drivers aredescribed more fully in Smart Power ICs, by B. Murari et al;, Eds.,1995, particularly Chapter 5, “Motion Control” by R. Gariboldi, at pp.225-283, which is herein incorporated by reference for its descriptionof background to the present invention.

As is disclosed, for example from the above-mentioned Gariboldipublication, for applications such as hard disk drives it is of utmostimportance to control the output voltage slope in order to reduceelectromagnetic interference (EMI). Generally, the slope is desired tobe steep, but not so abrupt as to cause any appreciable noise. Drivecircuits have therefore generally included slew rate control circuits toachieve fast, smooth transitions.

In a typical slew rate control system, a capacitor is charged anddischarged by two current generators. Preferably, one wishes to have thesame smooth, linear commutation both in going off-to-on and on-to-off.Also, one wishes to have the gate voltage change over a range fromground, or zero, to the maximum supply voltage, or at least a voltagethat assures full turn-on of the power device. The circuitry for doingso is referred to as a voltage ramp generator. It can be achieved, bytypical integration techniques, using basic current mirrors, one of apair of matched PNP bipolar transistors on the high side of the driveand the other of a pair of matched NPN bipolar transistors on the lowside of the drive. Each pair of the transistor structures has one with abase-collector connection so the device acts as a diode. The diode isconnected to the base of the other matched transistor. In someapplications, this can produce good linearity for much of the supplyvoltage range, but is limited by collector-emitter saturation voltagesnear ground and near the positive voltage. Generally, problems inachieving the desired linearity increase as the supply voltage isincreased. The greater precision with which linearity is achieved meansthat less noise can occur to affect the driver or its load.

An approach for attaining linearity at higher voltages than that forwhich the basic current mirror is suitable would be to use cascodedcurrent mirrors. A description of basic cascoded current mirrors andtheir use in constant-current stages is contained, for example, inBipolar and MOS Analog Integrated Circuit Design by Alan B. Grebene,Sec. 4.1, pp. 170-183, which is herein incorporated by reference.However, a single cascoded solution is not effective because it is notcapable of ramping down to zero volts. The PN junction effects of thecascode-connected transistors mean an inherent higher lower voltagelimit. The inability to go to zero volts is unacceptable for a highperformance drive.

Similar problems are encountered with current mirrors or cascodedcurrent mirrors made up of MOSFET(metal-oxide-semiconductor-field-effect-transistor) devices. BasicMOSFET current mirrors are also limited as far as providing goodlinearity in ramping with voltages encountered in integrated circuitcharge pump supplies. Cascode connected MOSFETs provide a better degreeof linearity but lack the ability to ramp down to a zero level to ensureturn off of a power device. There are inherent gate to source voltagedrops of MOSFETs that prevent a satisfactory reduction in voltage. Thebook of Grebene cited above also describes the nature and use of MOSFETcurrent mirrors, at Sec. 6.2, pp. 271-277, and is herein incorporated byreference.

Referring now to FIG. 1, a circuit schematic diagram of a representativeprior art voltage ramp generator is shown. A DC supply of a voltage Vccis applied across a combination of current generators and a capacitor C,which may, for example, be a slew rate control capacitor of a drivercircuit. The current generators, also referred to as constant currentsources, include a first current source Ic that is connected between thesupply and the capacitor C for charging the capacitor. A second currentsource Id for discharging the capacitor C is connected to thecapacitor's high side or charge terminal, as is source Ic, and toground. A switch Sw1 is connected in a position to make or break aconnection between source Ic and the capacitor C. Switch Sw1 isactivated by command logic signals (COM) applied from other circuitry. Aswitch Sw2 is connected to make or break a connection between source Idand capacitor C; it receives command signals through an inverterconnected to the COM signals.

When a command signal is received to close Sw1, source Ic will charge upthe capacitor to an elevated voltage near Vcc while Sw2 remains open.When a command signal is received to open Sw1, Sw2 closes and source Idwill discharge C. Source Ic and source Id can each be designed to carrycurrents sufficient to provide substantially matching slew rates for thecapacitor voltage Vout. For example, Ic and Id may each be designed toconduct a current of magnitude I. The slew rate or slope of thecapacitor voltage Vout is therefore I/C both during charging anddischarging.

FIG. 2 illustrates a further example of a prior art voltage rampgenerator and is a more specific example of the general configuration ofFIG. 1. Relating the elements to FIG. 1, a charge source Ic comprises apair of matched PNP transistor structures Q1 and Q2 connected as a basiccurrent mirror between the supply Vcc and capacitor C. Transistor Q1 hasa direct connection between its base and collector and operates as adiode. A discharging current source Id comprises a pair of matched NPNtransistor structures Q3 and Q4, which are also connected as a basiccurrent mirror in which Q3 has its collector and based connected tooperate as a diode.

In the drawings, a symbol in the form of a pair of overlapping circlesis used to represent a current source and to inform one that in additionto the illustrated transistors, there are resistors and/or otherelements for transistor biasing in accordance with known current sourcepractice. The switches shown in the drawings may be suitablesemiconductor switches, such as field effect transistors, in accordancewith known practice.

FIG. 3 shows an example of performance sought to be realized by voltageramp generators like those of FIG. 2. Part A of FIG. 3 shows changes inVout occurring as a result of command signals (COM) shown in part B onthe same time axis. A command signal is either a logic “0” or “1.” Herea “0” command is the signal to start discharging. The signal at timet(0) starts that process. The slew rate of Vout is I/C, where I is thecurrent of source Id. At time t1 the discharge is completed and Voutremains zero until a command signal of “1” is received at time t2. Thatstarts the charging process with substantially the same slope of slewrate, but one determined by the current of source Ic. At time t3, Voutis at its maximum. Vout remains at that level until a further “0”command is received at time t4 and the discharge process begins again.

FIG. 3 is not intended to show exact values of capacitor voltage Vout.For circuits such as FIG. 2, a maximum Vout is not quite the supplyvoltage Vcc but is equal to Vcc minus a collector-emitter saturationvoltage (e.g., for Q2 of FIG. 2) of Vcesat. The minimum Vout is aboveground voltage by an amount equal to the collector-emitter saturationvoltage (e.g. for Q4 of FIG. 2). The results achieved in FIG. 2 aregenerally suitable for driver circuits. The minimum Vout is effectively“zero” and sufficient to enable turning off a power device despite thevoltage difference mentioned above.

As described above, the operation of some power stages requires a drivercircuit operating from a voltage elevated above the power device supplyVcc, such as by about 10v. The elevated charge pump voltage Vcp, can begenerated in an integrated circuit from Vcc by known techniques. Thehigher voltage makes basic current mirrors like those of FIG. 2 performtheir ramping functions with a less linear characteristic. In astraightforward integrated circuit design, the imposition of highervoltages on current sources could lead one to change from basic currentmirrors as in FIG. 2 to cascode connected current mirrors. In contrastto FIG. 2 having a current mirror with transistor structures such as Q1and Q2 in a current source, one could have two cascoded current mirrorsin each current source both for charging and discharging. The extratransistors of the additional current mirrors are not appreciablydifficult to integrate so the ability to achieve good linearity withhigher output voltage may initially make cascoded current mirrors appearsuccessful in satisfying the need of high performance driver circuits.

Operating of a voltage ramp generator with cascoded current mirrors,with for example a voltage Vcp about 10 v. higher than Vcc, is generallythe same as the generator of FIG. 2 but with a serious drawback. Themaximum voltage is not a major problem; ramping up to a voltage closeenough to Vcp can usually be readily achieved. However, the minimumvoltage is a serious problem. There should be no appreciable voltage atthe minimum (i.e. Vout should be substantially “zero” in order tocompletely turn off the power device being driven). The extra voltagedrop introduced by the cascoded current mirrors, as compared to a basicconfiguration as in FIG. 2, can be enough to prevent turn-off of thepower device.

U.S. Pat. No. 5,825,218 issued on Oct. 20, 1998 to Colli et al., whichis herein incorporated by reference in its entirety, addresses theseconcerns with a voltage ramp generator for a driver circuit that isdesigned to produce a capacitor output voltage Vout that is highlylinear between zero and a maximum voltage. Two current sources areemployed, one cascoded and one not cascoded; a comparator makes adecision to switch from the first, cascoded current source to the secondcurrent source when the capacitor output voltage Vout goes low enough.The first current source takes the capacitor voltage to a low value butnot all the way down to ground. When the comparator makes the decisionto switch, the second current source then takes the capacitor voltageVout substantially to zero (ground).

While this approach of U.S. Pat. No. 5,825,218 achieves a linear slopeof Vout between the maximum voltage and ground, there is the possibilityof having a difference in slopes at the switch-over point due to thefact that two separate current sources are being used. There is noteaching in the U.S. Pat. No. 5,825,218 patent on how such a matchingerror could be suppressed.

In addition to this concern with mismatch in slopes at the switch-overpoint between two current sources, a second linearity term of interestis caused by one transistor of a current mirror being in saturationwhile the other transistor of the current mirror is not. This issue isof concern in U.S. Pat. No. 5,825,218 as well as other prior artcircuits. While the voltage ramp generator of U.S. Pat. No. 5,825,218generally provides a highly linear ramp down of Vout towards ground,there is characteristically a slight deviation from linearity in theramp as the ramp voltage Vout approaches ground. This linearity error bythe mismatch in operating regions between the reference and mirrortransistors of a current mirror; as Vout is lowered, the mirrortransistor may move from the saturation region into the linear regionwhile the reference transistor of the current mirror remains in thesaturated region of operation. As the mirror transistor goes into thetriode, or linear, region, its drain current decreases, thereby causingthe capacitor to discharge at a slower rate. It is this slower rate ofdischarge of the capacitor that causes the linearity deviation.

SUMMARY OF THE INVENTION

It is an object of the present invention to achieve accurate, preciseslew rate control for devices such as spindle motor drives.

Therefore, according to the present invention, three embodiments areshown, each capable of linearly discharging a capacitor for slew ratecontrol of a power driving stage from a maximum voltage to a minimumsupply voltage, such as ground, in a highly linear fashion. Thecapacitor may be coupled to any suitable low impedance voltagepotential, such as ground. According to a first embodiment of thepresent invention, a voltage ramp generator has a decision-makingelement and a cascoded current source. The decision-making element isprovided with a reference voltage and an output voltage of the capacitorand is coupled to the ground voltage and a supply voltage; the capacitoris coupled to any suitable low impedance voltage potential, such asground or any other suitable high impedance potential. The cascodedcurrent source is coupled to the output voltage of the capacitor andground. When the decision-making element detects that the output voltageof the capacitor has discharged to a predetermined interim voltage thatis less than the reference voltage, the decision-making elementgenerates a control signal that causes the current source to ramp downthe output voltage of the capacitor from the predetermined interimvoltage to ground.

According to a second embodiment of the present invention, a voltageramp generator has a cascoded current source that has a current mirror,at least a first cascode device coupled to the output voltage of thecapacitor in the mirror leg of the current mirror, and at least a firstbiasing device coupled to a supply voltage in the reference leg of thecurrent mirror for biasing the at least first cascode device. Thecurrent mirror and the first cascode device operate in a saturated orhigh resistance region as the output voltage of the capacitor falls fromthe maximum voltage to ensure a high impedance of the output voltage ofthe capacitor until the output voltage of the capacitor reaches a firstinterim voltage. When the output voltage of the capacitor reaches thefirst interim voltage the first cascode device operates in a linear orlow resistance region, the current mirror transistor continues tooperate in the high resistance region, and the output voltage of thecapacitor is no longer as high of an impedance, but the output voltagebeing at or below the first interim voltage does not require that theoutput voltage be as high an impedance to continue linearly dischargingthe capacitor to ground. A second biasing device and cascode device maybe added to this current mirror configuration if desired.

According to a third embodiment of the present invention, the concernwith slope mismatches at the switch-over point between two currentsources as well as the linearity concern that results when thetransistors of a current mirror are not in the same operating mode areboth addressed. In its broadest sense, the third embodiment of thepresent invention is directed to an improvement in a high-impedancecurrent source that has a wide voltage compliance range and highlinearity. The current source has an input reference current coupled toa first supply voltage, a current mirror coupled to a second supplyvoltage, comprising a reference transistor in a reference leg and amirror transistor in a mirror leg, with the mirror transistor iscontrolled in part by the reference transistor, and a biasingarrangement coupled between the input reference current and the currentmirror and to an output voltage. The biasing arrangement operates toensure that the reference transistor and the mirror transistor bothoperate in the same operating region, even if the mirror transistortransitions from a first operating region to a second operation regionof possible operating regions, over a wide range of output voltages. Thehigh-impedance current source of the third embodiment may be used incombination with a capacitor to create a ramp generator capable ofdischarging the capacitor for slew rate control of a power stage from amaximum voltage to the second supply or ground voltage. When the outputvoltage of the capacitor falls below a first interim voltage and themirror transistor goes from a high resistance region of operation into alow resistance region of operation by a certain amount, the biasingarrangement causes the reference transistor to likewise enter the lowresistance region of operation by the same amount while maintaining apredetermined current relationship between the reference transistor andthe mirror transistor. This maintains the desired linear discharge ofthe capacitor closer to ground than previous circuits.

BRIEF DESCRIPTION OF THE DRAWINGS

The novel features believed characteristic of the invention are setforth in the appended claims. The invention itself, however, as well asa preferred mode of use, and further objects and advantages thereof,will best be understood by reference to the following detaileddescription of an illustrative embodiment when read in conjunction withthe accompanying drawing(s), wherein:

FIG. 1 is a circuit schematic of a voltage ramp generator in accordancewith the prior art;

FIG. 2 is a circuit schematic further showing a combination inaccordance with the prior art;

FIG. 3 is a set of waveforms illustrating voltage ramp performance inresponse to command signals;

FIG. 4 is a circuit schematic of a driver circuit with a voltage rampgenerator;

FIG. 5 is a voltage ramp generator in accordance with a first embodimentof the present invention;

FIG. 6 is a voltage ramp generator in accordance with a secondembodiment of the present invention;

FIG. 7A illustrates a current mirror in accordance with the prior art;

FIG. 7B is a waveform illustrative of the current mirror formation ofFIG. 7A; and

FIG. 8 is a voltage ramp generator in accordance with a third embodimentof the present invention.

DESCRIPTION OF THE INVENTION

Referring to FIG. 4, a schematic diagram of a driver circuit with avoltage ramp generator illustrates the need for a wide range inlinearity of the capacitor output voltage Vout. Drive circuit 10 has avoltage ramp generator 12 that includes capacitor C and current source14. The voltage ramp generator 12 serves as a slew rate control systemfor the driver circuit. The driver circuit 10 also has an amplifier (orop-amp) 16 that receives an input at one terminal, which is Vout fromthe voltage ramp generator 12. The output from the amplifier 16 is thegate voltage Vg applied to a power device 18 which may be an N-channelDMOS device. Such a power device has a DC voltage applied to its channelby supply Vcc but requires that Vg range from zero, for completeturn-off, to a voltage substantially above Vcc for complete turn-on. Asecond power supply Vcp supplies a DC voltage to the current sources 14and biases the amplifier 16. Vcp is greater than Vcc due to therequirements for Vg.

FIG. 4 shows the driver circuit 10 as a high side driver for a load,such as a spindle motor coils for a hard disk drive motor, which wouldhave a low side driver, LSD, between it and ground. The driver outputvoltage Vs is applied to the load as well as back to an input ofamplifier 16 as a feedback signal.

Basically, the voltage across the capacitor Vout is used to drive thepower device 18. In order to turn off a power DMOS device, it isnecessary to have a voltage between the gate and source of device 18that is less than 1 volt. So it is very important that the voltage rampgenerator provide a substantially “zero” Vout. However, if cascodedcurrent mirrors are relied on as the only current sources in the voltageramp generator, there is too much voltage drop of the low end of theslew voltage range to insure turn-off.

For driving device 18 on, Vg needs to go up to about 10 volts greaterthan Vcc. At the high end of the range, the cascoded mirrors would alsocause an offset from Vcp due to voltage drops due to PN junction effectsof about 2 Vbe when cascoded current mirrors of bipolar transistors areused. That may be satisfactory because Vcp can still be high enough toensure that Vg is enough for full turn-on.

The present invention provides the voltage ramp generator with theability to reach the required zero voltage level. It can also be appliedin an embodiment with additional capability at the high voltage side sothat Vout can match Vcp and provide an essentially full rail-to-railramp generator without sacrificing the quality or precision of linearityat the desired slew rate. The present invention is particularlybeneficial for high side drivers in integrated circuits for energizingspindle motor coils, such as for hard disk drives.

Referring now to FIG. 5, a voltage ramp generator 12′ in accordance witha first embodiment of the present invention is illustrated. Voltage rampgenerator 12′, unlike the prior art solutions, employs a cascodedcurrent source 22 (as opposed to two current sources) having acascode-connected pair of current mirrors. Voltage ramp generator 12′has the elements shown in the figure, including I1 reference current 20,Q1 bipolar transistor 24, Q2 bipolar transistor 26, M1 MOSFET 30, M2MOSFET 32, M3 MOSFET 28, capacitor C, and comparator 36. Cascodedcurrent source 22 has a current mirror is formed by M1 transistor 30 andM2 transistor 32 in current mirror formation, with diode-connected M1transistor 30 in the reference leg and M2 transistor 32 in the mirrorleg, Q2 cascode device 26, and diode-connected Q1 biasing device 24. Forsimplicity, only the sink or discharging cascoded current source ofvoltage ramp generator 12 is shown; one of ordinary skill in the artwill recognize that a current source may be used to charge capacitor Cof voltage ramp generator 12′.

When decision-making element comparator 36 senses that Vout voltage isgetting too low to support the cascode, as determined by comparing Voutto Vref reference voltage 38, then the output signal 39 of comparator 36shorts around Q2 transistor 26, effectively switching out Q2 bipolartransistor 26 and replacing it with M3 MOS transistor 28. The cascodedevice of cascoded current source 22 is now effectively M3 MOSFET 28,effectively causing current source 22 to operate as a non-cascodedcurrent source. This allows the ramp waveform of the voltage rampgenerator 12′ to go all the way down to ground, with M3 MOS transistor28 always being in the linear operating region, also referred to as thetriode or low resistance region. Vref is chosen to be a voltage enoughabove zero to be in the range in which voltage ramp generator 12′ iscapable of efficiently providing linear ramping of the voltage. However,it is preferred that Vref be relatively small so that the non-cascodedcurrent source 22 is required to conduct only over a small voltage.

The voltage ramp generator of FIG. 5 provides advantages over the priorart. The output voltage of the capacitor Vout is achieved in a highlylinear manner from a maximum voltage down to a minimum ground voltagewith much fewer required devices. The present invention uses a singlecascoded current source to achieve this, instead of the at least twocurrent sources and switch required in the prior art. The use of asingle current source eliminates the matching error caused by thedifference in slopes between two current sources at the switch-overpoint, discussed above.

Referring now to FIG. 6, a voltage ramp generator 12″ in accordance witha second embodiment of the present invention is illustrated. Voltageramp generator 12″ is capable of linearly discharging a capacitor forslew rate control of the power device 18 from a maximum voltage to aminimum ground voltage. Voltage ramp generator 12″ of the secondembodiment again utilizes a cascoded current source 55 to achieve lineardischarging of capacitor C, but does so exclusively with MOSFET devicesas shown. The cascoded current source 55 is a double-cascode formationthat ensures that an extremely high output impedance and thus ensures ahighly linear ramp waveform. This embodiment does not require acomparator and does not perform any switching at all during thedischarging of capacitor C.

Voltage ramp generator 12′ has I1 reference current 52, M1 MOSFET device40, M2 MOSFET device 42, M3 MOSFET device 44, M4 MOSFET device 46, M5MOSFET device 48, M6 MOSFET device 50, and capacitor C. MOSFET devicesM1, M2, M3, M4, M5, and M6 together define the cascoded current source55; as will be explained below, the double cascode effect provided byMOSFET devices M5 and M6, while a valuable feature that creates anextremely high output impedance of Vout, is optional and not requiredfor practice of the invention. Cascoded current source 55 is coupledbetween supply voltage Vcp, capacitor output voltage Vout and ground andis arranged in a double cascoded formation defined by a current mirrorformed by M1 transistor 40 and M2 transistor 42, either one or twocascode devices (M4 transistor 46, M6 transistor 50) serially connectedto M2 transistor 42, and either one or two biasing devices M3, M5serially connected to M1 transistor 40 to bias M4 transistor 46, M6transistor 50, respectively The current mirror formed by diode-connectedM1 transistor 40 in the reference leg and M2 transistor 42 in the mirrorleg is coupled to ground as shown. M3 MOSFET device 44 isdiode-connected, as is M5 MOSFET device 48. M5 device 48 is coupled toVcp supply voltage and MOSFET device 44 while M6 MOSFET device 60 iscoupled to capacitor output voltage Vout and M4 MOSFET device 46.

The cascoded current source 55 of voltage ramp generator 12″ is capableof linearly discharging capacitor C from a maximum voltage to a minimumground voltage in order to accomplish slew rate control of a powerdriver device 18 of FIG. 4. Transistors 42, 46, and 50 all operate inthe saturation or high resistance region as Vout falls from a maximumvoltage towards zero volts until Vout falls to a interim voltage. WhenVout reaches or falls below the interim voltage then at least one ofthese transistors will move from the saturation region to the linear, orlow resistance, region of operation and correspondingly lower the outputimpedance of Vout. By the time that Vout falls to the interim voltage,however, this voltage is low enough that the lower output impedance doesnot have an adverse affect on the linearity of the discharging ofcapacitor C.

Cascoded current source 55 may be implemented in either adouble-cascoded configuration with two cascode devices M4 MOSFET 46 andM6 MOSFET 50 as shown in FIG. 6 or a single-cascoded configurationwithout M6 MOSFET 50 and its biasing device M5 MOSFET 48. In thedouble-cascoded configuration of FIG. 6 in which two cascode devices, M4device 46 and M6 device 50, along with their biasing devices, M3 device44 and M5 device 48, respectively, are used, there will be a first and asecond interim voltage that will operate to affect the operating regionof mirror leg transistors 46 and 50 in two stages. As Vout drops fromthe maximum voltage towards zero, it will first reach a first interimvoltage. At this point, M6 MOSFET device 50 will move from thesaturation region to the linear region of operation while M4, M2 MOSFETdevices 46, 42 will remain in the saturated region of operation. Thishas the effect of lowering the high output impedance of Vout, necessaryto achieving the linear discharge of capacitor C, that was previouslyprovided by all three transistors 50, 46, 42 operating in the saturationregion. Vout, however, is still at a relatively high output impedanceowing to the continued operation of MOSFET devices 42 and 46 in thesaturation region and the linearity of the discharge operation is notadversely affected. Vout continues to ramp down towards ground andreaches a second, lower interim voltage. At this point, M4 MOSFET device46 will join device 50 in operating in the linear, low resistance,region of operation, thereby again lowering the output impedance ofVout. Fortunately, the linearity of the discharge of capacitor C, asreflected in Vout, is not affected by this development too much. Vout bythis time has decreased to a low enough voltage across M2 MOSFET device42 that a high impedance output is no longer needed, and the singledevice M2 MOSFET 42 is of high enough impedance to finish ramping downcapacitor C linearly to ground.

As previously noted, it is not necessary to the operation of theinvention that the double-cascoded formation shown in FIG. 6 be used. M5MOSFET device 48 and M6 MOSFET device 50 could be deleted from thecircuit, although not as high an output impedance would be achievedwithout them. Rather than two interim voltages, there would be a singleinterim voltage that, once reached, would cause M4 MOSFET device 46 togo from a saturated region of operation to a linear region of operation.

The voltage ramp generator 12″ of the second embodiment of the inventionprovides a simple, yet elegant, approach to providing an output voltagebetween a maximum voltage and ground that is highly linear. Nodecision-making element, such as a comparator, or switching mechanism isneeded to practice this embodiment since the linear discharge ofcapacitor C is accomplished automatically. Only MOSFET devices are usedto automatically adjust Vout while maintain high output impedance,further adding to the linearity that is achieved. Moreover, the costsattendant with combining bipolar and MOS technologies are avoided.

While the embodiment of FIG. 6 generally provides a highly linear rampdown of Vout towards ground, there is a slight deviation from linearityin the ramp when the ramp voltage Vout gets extremely close to groundand M2 MOSFET device 42 goes into the linear or low resistance region.This occurs after M6 and M4 MOSFET devices 50, 46 go into the linearregion and thus FIG. 2 is effectively represented as FIG. 7A. FIG. 7Billustrates the slight deviation from linearity that occurs during theramping down of Vout as Vout approaches zero volts, or ground. Thelinearity error of the current mirror is caused because the referencetransistor M1 MOSFET device 40 in the mirror is always in the saturatedregion and is responsible for establishing a fixed gate to sourcevoltage (Vgs) for both M2 MOSFET device 42 and M1 MOSFET device 40. AsM2 MOSFET device 42 goes into the triode, or linear, region ofoperation, since its Vgs is constant, its drain current decreases,thereby causing the capacitor C to discharge at a slower rate. The drainvoltage of a MOS transistor controls the region in which the transistorwill operate and thus is important to matching between transistors. Theslower rate of discharge of capacitor C creates a slight deviation fromthe desired linearity as Vout ramps down to ground. MOSFET devices 30,32 of FIG. 5 have a similar deviation from linearity as Vout approachesground.

Referring now to FIG. 8, a third embodiment of the present inventionthat overcomes this slight deviation in linearity and thus can ensure alinear ramp down of Vout to ground is illustrated. Voltage rampgenerator 12′″ overcomes the mirror error illustrated in FIGS. 7A and 7Bby ensuring that the transistor in the reference leg of the currentmirror is in the same region of operation as the transistor in themirror leg of the current mirror, regardless of the region of operationof the mirror leg transistor. The circuitry of FIG. 8 relies upon thefact that the drain voltage of a MOS transistor controls the region inwhich the transistor will operate and thus is important to providingproper matching between transistors.

Voltage ramp generator 12′″ has several elements, including 11 referencecurrent 74, MN1, MN2, MN3, MN4, MN5, MN6 MOSFET devices 60, 62, 64, 68,70, 72, amplifier A1,and capacitor C. Gate-connected MOSFET devices 60and 62 have their sources coupled to ground. MOSFET device 64 is coupledto MOSFET device 60 at a node and this node is provided as a first,negative input to A1 amplifier 66. MN2 MOSFET device 62 is coupled toMN7 MOSFET device 68 at a node which is provided to the non-invertinginput of A1 amplifier 66. Diode-connected MN4 MOSFET device 70 iscoupled to MN3 MOSFET device 64 at a node that is coupled to the gatesof MN1, MN2 MOSFET devices 60, 62. MN4 MOSFET device 70 and MN5 MOSFETdevice 72 are gate-connected at a node which is also coupled to I1reference current 74. I1 reference current 74 is coupled to supplyvoltage Vcp. MN5 MOSFET device 72 is coupled to MN7 MOSFET device 68 andthe gate of MN7 is coupled to supply voltage Vcp as shown. MN5 MOSFETdevice is coupled to capacitor C at the capacitor output voltage Vout.MN7 MOSFET device 68 operates continuously in the linear region. A1amplifier 66 should be of a type that can accept input common voltagesthat include ground and still operate properly. Amplifiers of this typetypically have P-channel input transistors as is known in the art.

Cascoded current mirror 75 is formed by the current mirror formed by MN1device 60 in the reference leg and MN2 device 62 in the mirror leg, MN3device 64 in the reference leg coupled to MN7 device 68 in the mirrorleg via A1 amplifier 66 as shown, and a biasing, diode-connected MN4MOSFET device 70 in the reference leg that biases cascode MN5 MOSFETdevice 72 in the mirror leg.

Voltage ramp generator 12′″ has an extremely high output impedance whichguarantees a linear ramp waveform on capacitor C, but it also has theability to preserve this linearity far closer to zero than the otherembodiments or the prior art. I1 reference current 74 enters thecascoded current mirror 75 at diode-connected MN4 MOSFET device 70 andhas a corresponding output at the drain of MN5 cascode MOSFET device 72.For use in creating a ramp caused by the current output dischargingcapacitor C, the voltage Vout falls linearly with time according to theknown relationship, CdV/dt=I. If the current source is capable ofkeeping current I truly constant over all output voltages of interest,then true linearity of the ramp is achieved.

An examination of the operation of voltage ramp generator 12′″ undermoderate output voltages of Vout, defined as voltages of Vout equal toor greater than a first interim voltage, such as 1.5 volts, forinstance, will now be described. As will be seen, operation at or abovethe first interim voltage will allow both MN2 device 62 and MN5 device72 to remain in the saturation regions. Under moderate output voltagesof Vout in which both MN2 MOSFET device 62 and MN5 MOSFET device 72operate in the saturated region, A1 amplifier 66 operates to take thegate voltage of MN3 device 64 to nearly the positive rail, therebyforcing MN3 device 64 to operate deep in the linear, or low resistance,region, with little voltage drop across it. Under these same conditions,assuming that MN7 device 68 is of similar size as MN3 device 64, MN7device 68 will have a similar Vgs and Vds (drain-to-source voltage) asMN3 device 64, and both branches of the current mirror formed by devices60 and 62 will be balanced. In this mode of operation, even thoughamplifier Al output is near the positive rail, A1 amplifier 66 operatesto keep the drain voltage of MN2 device 62 equal to the drain voltage ofMN1 device 60, with great precision. MN3 device 64 becomes an effectiveshort and the gate of MN1 device 60 is coupled to its own drain voltage,thereby forcing MN1 device 60 to operate in the saturated region likeMN2 device 62. This tends to boost the output impedance seen at thedrain of MN5 device 72. If the drain voltage of MN2 device 62 does notchange with change of output voltage Vout, then the output current atthe drain of MN5 device 72 will be constant over any output voltageVout.

Now the operation of voltage ramp generator 12′″ as the output voltageVout falls below the first interim voltage towards a second, lowerinterim voltage will be discussed. As Vout falls below the first interimvoltage, to perhaps less than 1.5 volts, for instance, MN5 device 72 andMN2 device 62 no longer both remain in the saturation region. As Voutfalls below the first interim voltage, cascoded MN5 device 72 first goesinto the linear or low resistance region while MN2 device 62 remainssaturated in the high resistance region. Even though MN4 device 70 issaturated while MN5 device 72 is linear, this does not contribute alinearity error to the ramp waveform because the output current at thedrain of MN5 device 72 is still controlled by MN2 device 62. As cascodedevice MN5 becomes linearly biased, some of the high output impedance islost but not the linearity, due to the operation of MN2 device 62.

As Vout falls even farther, such as below 200 mV, for instance, belowthe first interim voltage towards a second interim voltage, transistorMN2 also follows MN5 into the linear, or triode, region. This might beexpected to create a linearity error in the circuits of FIG. 5, 6, or7A, but such is not the case in the third embodiment of the inventionbecause MN1 device 60, which controls MN2 device 62, also goes into thelinear region a corresponding amount. A1 amplifier 66 operates in amanner to keep the Vds voltages of MN1 device 60 and MN2 device 62equal. Since both MN1 device 60 and MN2 device 62 share the same Vgs, itcan be seen that these two MOSFET devices will have identical Vgs, Vds,and Vbs, so that they will have identical currents going through themand will always operate in the same region, whether saturated or linear.This means that even as the output device MN2 goes keep into the linearregion, MN2 still accurately mirrors the input current flowing in MN1device 60, thereby achieving greater linearity on the ramp waveform onthe capacitor C.

It can be seen that the linearity of the ramp down of Vout towardsground is assured by ensuring that MN1 device 60 is in the same regionof operation as MN2 device 62 and by maintaining a predeterminedrelationship between the current flowing through MN1 device 60 and thecurrent flowing through MN2 device 62 over all values of Vout. The goalof maintaining MN1 MOSFET device 60 in the same operating region as MN2MOSFET device 62 in order to avoid mismatch is achieved.

It is herein noted that voltage ramp generator 12′″ of FIG. 8 may beimplemented without devices 68, 70, and 72 if desired while stillmaintaining the linearity of the output voltage Vout ramp waveform inaccordance with the invention. MN2 device 62 controls the discharge ofthe capacitor C and is controlled by MN1 device 60 the biasingarrangement provided by MN3 device 64 and A1 amplifier 66 in the mannerdescribed above. The non-inverting input of A1 amplifier 66 and MN2device would be coupled directly to the output voltage Vout of capacitorC while MN3 device 64 would be coupled directly to I1 reference current.

While the invention has been particularly shown and described withreference to one or more preferred embodiments, it will be understood bythose skilled in the art that various changes in form and detail may bemade therein without departing from the spirit and scope of theinvention.

1. (CANCELLED)
 2. (CANCELLED)
 3. (CANCELLED)
 4. (CANCELLED) 5.(CANCELLED)
 6. (CANCELLED)
 7. (CANCELLED)
 8. (CANCELLED)
 9. (CANCELLED)10. (CANCELLED)
 11. (CANCELLED)
 12. (CANCELLED)
 13. (CANCELLED) 14.(CANCELLED)
 15. A linear current source that has a wide voltagecompliance range comprising: an input reference current coupled to afirst supply voltage; a current mirror, coupled to a second supplyvoltage, comprising a reference transistor in a reference leg and amirror transistor in a mirror leg, wherein the mirror transistor iscontrolled in part by the reference transistor; a biasing arrangementcoupled between the reference transistor and the mirror transistor;wherein the biasing arrangement operates to ensure that the referencetransistor and the mirror transistor both operate in the same operatingregion maintaining a current relationship, even if the mirror transistortransitions from a first operating region to a second operating regionof a plurality of operating regions, over a wide range of outputvoltages.
 16. The current source of claim 15, wherein the linear currentsource is used in combination with a capacitor to create a rampgenerator capable of discharging the capacitor for slew rate control ofa power stage from a first voltage to the second supply voltage, whereinwhen an output voltage of the capacitor falls below a first interimvoltage and the mirror transistor goes from a high resistance region ofoperation into a low resistance region of operation, the biasingarrangement operatively causes the reference transistor to likewiseenter the low resistance region of operation while maintaining a currentrelationship between the reference transistor and the mirror transistor.17. The current source of claim 15, wherein the biasing arrangementcomprises an amplifier with a first input coupled to the mirrortransistor and a second input coupled to the reference transistor. 18.The current source of claim 17, wherein the amplifier of the biasingarrangement further comprises an output coupled to a transistor inseries with the reference transistor.
 19. The current source of claim18, wherein at least one of the transistor, the reference transistor,and the mirror transistor is a MOS transistor.
 20. A voltage rampgenerator capable of linearly discharging a capacitor for slew ratecontrol of a power driving stage, comprising: a decision-making elementthat is provided with a reference voltage and an output voltage of thecapacitor and is coupled to a first supply voltage and to a secondsupply voltage, wherein the capacitor is coupled to a low impedancevoltage; and a cascoded current source that is coupled to the outputvoltage of the capacitor and the first supply voltage; wherein when thedecision-making element detects that the output voltage of the capacitorhas discharged to a predetermined interim voltage that is less than thereference voltage, the decision-making element generates a controlsignal that causes the cascoded current source to operate as anon-cascoded current source to ramp down the output voltage of thecapacitor from the predetermined interim voltage to the first supplyvoltage.
 21. The voltage ramp generator of claim 20, wherein thecascoded current source comprises: a current mirror, coupled to thefirst supply voltage, comprising a first transistor in a reference legand a second transistor in a mirror leg; a cascode device coupled to thesecond transistor in the mirror leg and to the output voltage of thecapacitor; an auxiliary device, connected in parallel to the cascodedevice, that is controlled by the control signal generated by thedecision-making element; and a biasing device, coupled to the firsttransistor in the reference leg and to the cascode device, that providesbiasing to the cascode device; wherein when the decision-making elementdetects that the output voltage of the capacitor has discharged to thepredetermined interim voltage, the control signal causes the secondtransistor to short out the cascode device and causes the cascodedcurrent source to operate as a non-cascoded device with the auxiliarydevice in series with the second transistor in the mirror leg. 22.(CANCELLED)
 23. (CANCELLED)
 24. (CANCELLED)
 25. (CANCELLED)
 26. Thevoltage ramp generator of claim 21, wherein the first transistor, thesecond transistor, and the auxiliary device are MOSFET devices andwherein the biasing device and the cascode device are bipolar devices.27. The voltage ramp generator of claim 26, wherein the auxiliary deviceis in a low resistance region of operation when conducting.
 28. Thevoltage ramp generator of claim 20, wherein the second supply voltage isan elevated voltage.
 29. The voltage ramp generator of claim 28, whereinthe second supply voltage is a charge pump voltage.
 30. The voltage rampgenerator of claim 20, wherein the predetermined interim voltage is lessthan the reference voltage provided to the decision-making element. 31.The voltage ramp generator of claim 20, wherein the decision-makingelement is a comparator that compares the reference voltage and theoutput voltage of the capacitor.
 32. The voltage ramp generator of claim20, wherein the low impedance voltage is equal to the first supplyvoltage.
 33. A driver circuit that drives a power device of a powerdriving stage of a load, comprising: an amplifier having an outputconnected to a control terminal of the power device; and a slew ratecontrol system with an output node coupled to an input terminal of theamplifier, said slew rate control system comprising: a capacitor with acharge terminal coupled to the slew rate output node and a groundterminal coupled to a low impedance voltage; and a voltage rampgenerator capable of linearly discharging the capacitor for slew ratecontrol of the power driving stage from a voltage to a first supplyvoltage, said voltage ramp generator comprising: a decision-makingelement that is provided with a reference voltage and an output voltageof the capacitor; and a cascoded current source that is coupled to theoutput voltage of the capacitor and the first supply voltage; whereinwhen the decision-making element detects that the output voltage of thecapacitor has discharged to a predetermined interim voltage that isapproximately equal to the reference voltage, the decision-makingelement generates a control signal that causes the cascoded currentsource to operate as a non-cascoded current source to ramp down theoutput voltage of the capacitor from the predetermined interim voltageto the first supply voltage.
 34. The driver circuit of claim 33, whereinthe cascoded current source comprises: a current mirror, coupled to thefirst supply voltage, comprising a first transistor in a reference legand a second transistor in a mirror leg; and a cascode device coupled tothe second transistor in the mirror leg and to the output voltage of thecapacitor; an auxiliary device, connected in parallel to the cascodedevice, that is controlled by the control signal generated by thedecision-making element; and a biasing device, coupled to the firsttransistor in the reference leg and to the cascode device, that providesbiasing to the cascode device; wherein when the decision-making elementdetects that the output voltage of the capacitor has discharged to thepredetermined interim voltage, the control signal causes the secondtransistor to short out the cascode device and causes the cascodedcurrent source to operate as a non-cascoded current source with theauxiliary device in series with the second transistor in the mirror leg.35. The driver circuit of claim 34, wherein the first transistor, thesecond transistor, and the auxiliary device are MOSFET devices andwherein the biasing device and the cascode device are bipolar devices.36. The driver circuit of claim 35, wherein the auxiliary device is in alow resistance region of operation when conducting.
 37. The drivercircuit of claim 33, wherein the predetermined interim voltage isapproximately equal to the reference voltage provided to thedecision-making element.
 38. The driver circuit of claim 33, wherein thedecision-making element is a comparator that compares the referencevoltage and the output voltage of the capacitor.
 39. The driver circuitof claim 33, wherein the low impedance voltage is equal to the firstsupply voltage.
 40. A method of linearly discharging a capacitor forslew rate control of a power driving stage, comprising: detecting whenan output voltage of the capacitor has discharged to a predeterminedinterim voltage that is approximately equal to a reference voltage; whenthe output voltage of the capacitor has discharged to the predeterminedinterim voltage, using a non-cascoded current source to ramp down theoutput the cascoded current source going from the high resistance regionof operation to the low resistance region of operation thereby furtherlowering the output impedance of the output voltage, the first cascodetransistor continuing to operate in the low resistance region ofoperation, and the first transistor of the cascoded current sourcecontinuing to operate in the high resistance region of operation; andramping the output voltage from the second interim voltage to the supplyvoltage.